Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces
نویسندگان
چکیده
Fermi-level pinning by misfit dislocations at GaAs interfaces has been investigated. n -GaInAs was used to control the misfit dislocation density by varying of composition and epilayer thickness. interfaces with zero or low dislocation densities are Ohmic to current flow, and become rectifying with increasing dislocation density. The "Schottky barrier height" increases with dislocation density in accordance with a simple physical model which assumes Fermi-level pinning at the dislocation.
منابع مشابه
Defective Heterojunction Models
Fermi-level pinning behavior has been observed at the free surface, oxide interface, metal interface, MBE grown surface, stop-regrown homojunction, and misfit-dislocation pinned heterojunction of GaAs. Theories of such behavior are numerous and disparate. Theories of ideal heterojunction band offsets are less diverse, but have still not converged to a single mechanism. Recent studies of heteroj...
متن کاملOrigin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects
Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces with oxides. Indeed, proper device operation is generally prevented by a high density of interface defect states which lead to Fermi-level p...
متن کاملFormation of misfit dislocations in strained-layer GaAs/In
The Open University's repository of research publications and other research outputs Formation of misfit dislocations in strained-layer GaAs/In x Ga 1–x As/GaAs heterostructures during postfabrication thermal processing Journal Article (2003). Formation of misfit dislocations in strained-layer GaAs/InxGa1–xAs/GaAs heterostructures during postfabrication thermal processing. It is demonstrated th...
متن کاملTwo-Dimensional Numerical Simulation of Fermi- Level Pinning Phenomena Due to DX Centers in AlGaAs/GaAs HEMT’s
Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT’s are analyzed using two-dimensional numerical simulation based on a drift-diffusion model. A DX center model is introduced assuming Fermi-Dirac statistics for ionized donor density with the aluminum mole fraction dependence of the deep-donor energy level. The calculated results reveal that the decrease in transconductance of A...
متن کاملConfigurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5PÕGaAs heterostructures
A configuration of misfit dislocation dipoles is observed in a Ga0.5In0.5P heterostructure grown by solid-source molecular-beam epitaxy on GaAs. The dipole dislocations are mostly of 60° type, separated by ;3.5 nm. The dislocations are not produced by conventional lattice mismatch, rather, they could be the result of lateral compositional modulation in the Ga0.5In0.5P epilayer. © 2000 American ...
متن کامل